onsemi · FETs & Power MOSFETs · MPN FQD7N30TM
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 300V |
| Current - Continuous Drain(Id) | 5.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 2.5W;50W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 700mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 610pF |
300V 5.5A 5V 700mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS