onsemi · FETs & Power MOSFETs · MPN FQD6N60CTM-WS
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| Drain to Source Voltage | 600V |
|---|---|
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 80W |
| RDS(on) | 2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 810pF |
600V 4A 4V 80W 2Ω@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS