onsemi FQD6N40TM

onsemi · FETs & Power MOSFETs · MPN FQD6N40TM

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)1.15Ω@10V
Number1 N-channel
Input Capacitance(Ciss)620pF
TypeN-Channel

Technical details

400V 4.2A 5V 50W 1.15Ω@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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