onsemi · FETs & Power MOSFETs · MPN FQD6N40CTM
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| Gate Charge(Qg) | 20nC@320V |
|---|---|
| Drain to Source Voltage | 400V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 830mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 625pF |
400V 4.5A 4V 2.5W 830mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS