onsemi · FETs & Power MOSFETs · MPN FQD6N25TM
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| Gate Charge(Qg) | 8.5nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 4.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 2.5W;45W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 300pF |
250V 4.4A 5V 1Ω@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS