onsemi · FETs & Power MOSFETs · MPN FQD5P20TM
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| Gate Charge(Qg) | 13nC@160V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 3.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 1.4Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 430pF |
P-Channel 200V 3.7A 2.5W Surface Mount DPAK