onsemi · FETs & Power MOSFETs · MPN FQD5P10TM
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| Gate Charge(Qg) | 6.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 1.05Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 250pF |
P-Channel 100V 3.6A 25W Surface Mount DPAK