onsemi FQD5P10TM

onsemi · FETs & Power MOSFETs · MPN FQD5P10TM

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Specifications

Gate Charge(Qg)6.3nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)1.05Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)250pF

Technical details

P-Channel 100V 3.6A 25W Surface Mount DPAK

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