onsemi FQD5N20LTF

onsemi · FETs & Power MOSFETs · MPN FQD5N20LTF

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Specifications

Gate Charge(Qg)6.2nC@5V
Drain to Source Voltage200V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)3.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)325pF
TypeN-Channel

Technical details

200V 3.8A 2V 2.5W 1.2Ω@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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