onsemi · FETs & Power MOSFETs · MPN FQD4P40TM
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 400V |
| Current - Continuous Drain(Id) | 2.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2.5W;50W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.1Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 680pF |
400V 2.7A 3.1Ω@10V 1 P-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS