onsemi FQD4P25TF

onsemi · FETs & Power MOSFETs · MPN FQD4P25TF

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)2.1Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)420pF
TypeP-Channel

Technical details

250V 3.1A 5V 45W 2.1Ω@10V 1 P-Channel P-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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