onsemi · FETs & Power MOSFETs · MPN FQD4P25TF
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 85pF |
| Current - Continuous Drain(Id) | 3.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 2.1Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 420pF |
| Type | P-Channel |
250V 3.1A 5V 45W 2.1Ω@10V 1 P-Channel P-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS