onsemi · FETs & Power MOSFETs · MPN FQD4N25TM-WS
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| Gate Charge(Qg) | 5.6nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 2.5W;37W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.75Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 200pF |
250V 3A 5V 1.75Ω@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS