onsemi · FETs & Power MOSFETs · MPN FQD3P50TM
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 70pF |
| Current - Continuous Drain(Id) | 2.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 4.9Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 660pF |
| Type | P-Channel |
P-Channel 500V 2.1A 50W Surface Mount TO-252-2