onsemi FQD30N06TF

onsemi · FETs & Power MOSFETs · MPN FQD30N06TF

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)22.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)945pF
TypeN-Channel

Technical details

60V 22.7A 4V 45mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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