onsemi · FETs & Power MOSFETs · MPN FQD2N60CTF
No reviews yet — be the first to review onsemi FQD2N60CTF.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 600V |
| Gate Charge(Qg) | 12nC |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 44W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.6pF |
| RDS(on) | 4.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 235pF |
600V 1.9A 4V 44W 4.7Ω@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS