onsemi · FETs & Power MOSFETs · MPN FQD24N08TF
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 25nC |
| Output Capacitance(Coss) | 270pF |
| Current - Continuous Drain(Id) | 19.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 750pF |
| Type | N-Channel |
80V 19.6A 4V 2.5W 60mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS