onsemi · FETs & Power MOSFETs · MPN FQD20N06TM
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| Gate Charge(Qg) | 15nC@48V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 16.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 63mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 590pF |
N-Channel 60V 16.8A 38W Surface Mount TO-252(DPAK)