onsemi · FETs & Power MOSFETs · MPN FQD20N06TF
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 16.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 63mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 590pF |
| Type | N-Channel |
60V 16.8A 4V 63mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS