onsemi · FETs & Power MOSFETs · MPN FQD1N80TM
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 26pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| RDS(on) | 20Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 195pF |
| Type | N-Channel |
800V 1A 5V 45W 20Ω@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS