onsemi · FETs & Power MOSFETs · MPN FQD19N10TM
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| Gate Charge(Qg) | 25nC@80V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 15.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 78mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 780pF |
N-Channel 100V 15.6A 50W Surface Mount DPAK