onsemi · FETs & Power MOSFETs · MPN FQD19N10LTM
No reviews yet — be the first to review onsemi FQD19N10LTM.
| Gate Charge(Qg) | 18nC@5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 210pF |
| Current - Continuous Drain(Id) | 15.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870pF |
| Type | N-Channel |
N-Channel 100V 15.6A 50W Surface Mount DPAK