onsemi · FETs & Power MOSFETs · MPN FQD18N20V2TM
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 830pF |
| Type | N-Channel |
N-Channel 200V 15A 83W Surface Mount TO-252AA