onsemi FQD17P06TM

onsemi · FETs & Power MOSFETs · MPN FQD17P06TM

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)27nC@10V
Output Capacitance(Coss)420pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation44W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)135mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)900pF
TypeP-Channel

Technical details

P-Channel 60V 12A 44W Surface Mount DPAK

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