onsemi · FETs & Power MOSFETs · MPN FQD13N06TM
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| Gate Charge(Qg) | 7.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 310pF |
60V 10A 2V 28W 1 N-channel DPAK-3 Single FETs, MOSFETs RoHS