onsemi · FETs & Power MOSFETs · MPN FQD12P10TM
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| Gate Charge(Qg) | 130nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 9.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 290mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 800pF |
| Type | P-Channel |
100V 9.4A 4V 50W 290mΩ@10V 1 P-Channel P-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS