onsemi · FETs & Power MOSFETs · MPN FQD12N20TM
No reviews yet — be the first to review onsemi FQD12N20TM.
| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 910pF |
| Type | N-Channel |
200V 9A 5V 55W 280mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS