onsemi · FETs & Power MOSFETs · MPN FQD12N20LTM
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| Gate Charge(Qg) | 21nC@5V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 155pF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.08nF |
| Type | N-Channel |
N-Channel 200V 9A 55W Surface Mount DPAK