onsemi · FETs & Power MOSFETs · MPN FQD11P06TM
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| Gate Charge(Qg) | 17nC@48V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 9.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 185mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 550pF |
P-Channel 60V 9.4A 2.5W Surface Mount DPAK