onsemi · FETs & Power MOSFETs · MPN FQB9P25TM
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| Gate Charge(Qg) | 29nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 9.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 3.13W;120W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 910pF |
250V 9.4A 5V 1 P-Channel D2PAK Single FETs, MOSFETs RoHS