onsemi · FETs & Power MOSFETs · MPN FQB8N60CTM
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| Gate Charge(Qg) | 36nC@480V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 147W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.255nF |
600V 7.5A 4V 147W 1.2Ω@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS