onsemi · FETs & Power MOSFETs · MPN FQB85N06TM
No reviews yet — be the first to review onsemi FQB85N06TM.
| Gate Charge(Qg) | 112nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.5nF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.12nF |
| Type | N-Channel |
60V 85A 4V 3.75W 10mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs