onsemi FQB7P20TM-F085

onsemi · FETs & Power MOSFETs · MPN FQB7P20TM-F085

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)7.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation3.13W;90W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)540mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)590pF

Technical details

200V 7.3A 5V 540mΩ@4.5V 1 P-Channel D2PAK Single FETs, MOSFETs RoHS

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