onsemi · FETs & Power MOSFETs · MPN FQB7P20TM
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| Gate Charge(Qg) | 25nC |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 7.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 690mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 770pF |
200V 7.3A 3.13W 690mΩ@10V 1 P-Channel D2PAK Single FETs, MOSFETs RoHS