onsemi · FETs & Power MOSFETs · MPN FQB70N10TM
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Output Capacitance(Coss) | 3.3nF |
| Current - Continuous Drain(Id) | 57A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 23mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.5nF |
| Type | N-Channel |
100V 57A 4V 160W 23mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs