onsemi · FETs & Power MOSFETs · MPN FQB6N80TM
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 5.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 1.95Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.5nF |
800V 5.8A 3V 3.13W 1.95Ω@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS