onsemi FQB6N40CFTM

onsemi · FETs & Power MOSFETs · MPN FQB6N40CFTM

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage400V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)625pF
TypeN-Channel

Technical details

400V 6A 4V 1.1Ω@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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