onsemi · FETs & Power MOSFETs · MPN FQB5P10TM
No reviews yet — be the first to review onsemi FQB5P10TM.
| Gate Charge(Qg) | 8.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 1.05Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 250pF |
| Type | P-Channel |
100V 4.5A 4V 3.75W 1.05Ω@10V 1 P-Channel P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS