onsemi · FETs & Power MOSFETs · MPN FQB5N90TM
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| Gate Charge(Qg) | 40nC@720V |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 5.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 158W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 2.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.55nF |
N-Channel 900V 5.4A 158W Surface Mount D2PAK