onsemi · FETs & Power MOSFETs · MPN FQB55N10TM
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| Gate Charge(Qg) | 98nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 830pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 155W |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| RDS(on) | 26mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.73nF |
| Type | N-Channel |
100V 55A 4V 155W 26mΩ@10V 1 N-channel N-Channel D2PAK-3 Single FETs, MOSFETs RoHS