onsemi · FETs & Power MOSFETs · MPN FQB50N06TM
No reviews yet — be the first to review onsemi FQB50N06TM.
| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.18nF |
60V 50A 4V 120W 18mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS