onsemi · FETs & Power MOSFETs · MPN FQB50N06LTM
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 52.4A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 21mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.63nF |
60V 52.4A 2.5V 3.75W 21mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS