onsemi · FETs & Power MOSFETs · MPN FQB4N80TM
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| Gate Charge(Qg) | 25nC@640V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 3.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 880pF |
800V 3.9A 5V 3.13W 3.6Ω@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS