onsemi · FETs & Power MOSFETs · MPN FQB47P06TM-AM002
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| Gate Charge(Qg) | 110nC@48V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 47A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF |
| RDS(on) | 26mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.6nF |
P-Channel 60V 47A 3.75W Surface Mount D2PAK