onsemi · FETs & Power MOSFETs · MPN FQB44N10TM
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| Gate Charge(Qg) | 62nC@80V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 550pF |
| Current - Continuous Drain(Id) | 43.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 39mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
| Type | N-Channel |
N-Channel 100V 43.5A 3.75W Surface Mount D2PAK