onsemi · FETs & Power MOSFETs · MPN FQB34P10TM
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| Gate Charge(Qg) | 110nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 33.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
| RDS(on) | 60mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.91nF |
100V 33.5A 4V 3.75W 60mΩ@10V 1 P-Channel D2PAK Single FETs, MOSFETs RoHS