onsemi · FETs & Power MOSFETs · MPN FQB34N20TM-AM002
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 3.13W;180W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
200V 31A 5V 1 N-channel D2PAK Single FETs, MOSFETs RoHS