onsemi · FETs & Power MOSFETs · MPN FQB2P25TM
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 8.5nC@10V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF |
| RDS(on) | 4Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 250pF |
| Type | P-Channel |
250V 2.3A 5V 52W 4Ω@10V 1 P-Channel P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS