onsemi · FETs & Power MOSFETs · MPN FQB2N50TM
No reviews yet — be the first to review onsemi FQB2N50TM.
| Gate Charge(Qg) | 8nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 40pF |
| Current - Continuous Drain(Id) | 2.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 5.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 230pF |
| Type | N-Channel |
500V 2.1A 5V 55W 5.3Ω@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS