onsemi · FETs & Power MOSFETs · MPN FQB27P06TM
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| Gate Charge(Qg) | 43nC@48V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| RDS(on) | 70mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.4nF |
P-Channel 60V 27A 3.75W Surface Mount TO-263(D2Pak)