onsemi · FETs & Power MOSFETs · MPN FQB27N25TM
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 65nC |
| Output Capacitance(Coss) | 470pF |
| Current - Continuous Drain(Id) | 25.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.45nF |
| Type | N-Channel |
250V 25.5A 5V 180W 110mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS