onsemi · FETs & Power MOSFETs · MPN FQB22P10TM
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 600pF |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.5nF |
| Type | P-Channel |
P-Channel 100V 22A 125W Surface Mount D2PAK